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英國(guó)Ossila氧化硅基板晶片S146

英國(guó)Ossila氧化硅基板晶片S146
點(diǎn)擊放大
供應(yīng)數(shù)量:
1550
發(fā)布日期:
2025/3/23
有效日期:
2025/9/23
原 產(chǎn) 地:
英國(guó)
已獲點(diǎn)擊:
1550
產(chǎn)品報(bào)價(jià):
  [詳細(xì)資料]

只用于動(dòng)物實(shí)驗(yàn)研究等

Silicon substrates designed for use in organic electronics labs as FET substrates, and other applications including X-ray studies, surface microscopy analysis and elipsometry measurements. Sold on 200 mm wafer mounts pre-oxidised and pre-diced to our standardised substrate size of 15 mm x 20 mm, which fits in our substrate rack and makes batch cleaning and processing much faster and simpler.

Please note that the current batch of wafers do not have a protective photoresist coating. With constant product development and improvement and for consistency and stability over long periods of time, we have had the latest batch produced without the photoresist. If you have any queries or concerns about this then please get in touch with the Ossila office as we will be happy to advise you.

 

Product codeOxide (nm)DicingResistivity (Ω cm)Usage
S146300Diced0.0005 to 0.001OFETs with a robust electro-mechanical gate insulator (suitable for use with gold electrode evaporations)
S147400Diced X-ray measurements, microscopy and ellipsometry

 

Datasheet

Silicon oxide substrateIndividual silicon oxide substrate (300 nm oxide).

Silicon oxide substrates wafer - 8 inch (200 mm) diameterWafer of diced silicon substrates (300 nm oxide).

 

Wafer Specifications

Wafer diameter200 mm (8")
Oxide thickness tolerance+/- 5% (both sides)
Oxide growthThermally grown (dry) on both sides
Wafer type / dopantP / Boron
Wafer thickness725 +/- 25 µm
Wafer growthCzochralski (CZ)
Orientation<1 0 0>
Front surfacePolished
Back surfaceEtched

 

Dicing Specifications

Substrate size20 mm x 15 mm
Substrates per waferApprox. 75 complete substrates (plus partial edge pieces)
Wafer protectionNone

 

Cleaning routine

As with all organic electronic devices, getting a clean substrate is essential for high performance. Our pre-diced substrates make batch cleaning easier by use of a substrate rack. These wafers can be cleaned with the following routine:

  • 5 mins sonication in 1% (v/v) Hellmanex solution
  • 2x dump rinse in hot water
  • 5 mins sonication in IPA
  • 2x dump rinse in deionised water
  • N2 blow dry

 

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